The new power system composed of photovoltaic power generation is an important part of achieving carbon peak and carbon neutrality, and it is bound to integrate with energy storage, promoting the development of integrated photovoltaic-storage-charging systems. With the rapid development of 800V new energy vehicles, fast charging piles will be integrated into the photovoltaic-storage-charging system in the future, forming a new power system or microgrid. On one hand, bidirectional charging and discharging at high voltage is a typical feature of the new photovoltaic-storage-charging system. Silicon carbide devices, by upgrading module power and energy conversion efficiency, will be widely used in super-fast charging infrastructure. On the other hand, new energy vehicles are the largest application scenario for silicon carbide power semiconductors. Silicon carbide, with its high voltage resistance, high temperature resistance, and high-frequency characteristics, is expected to rapidly replace silicon-based and IGBT in high-voltage systems, significantly improving vehicle performance and optimizing the overall vehicle architecture. In addition to charging piles and wireless charging, silicon carbide power semiconductors have multiple in-vehicle application scenarios, including motor controllers, onboard chargers (OBC), DC-DC converters, and air compressors.
The UPS system is an important backup power source for many applications such as telecommunications, data centers, hospitals, and industrial facilities. In data center power supply systems, modular UPS has received increasing attention in recent years due to its small size, high power density, and ease of expansion and maintenance. Compared with traditional silicon-based power devices and other options, using SiC based technology to design UPS systems can greatly improve the energy efficiency of these infrastructure operations. In recent years, with the development of silicon carbide materials and devices, silicon carbide diodes have been first applied to UPS. Due to SiC; The advantages of MOSFET in high temperature, high voltage, high switching frequency, and high power density effectively reduce the power loss of the system, simplify the topology structure of the converter, and improve the system efficiency. With the rapid development of data centers, silicon carbide devices are gradually being used in their power supply.
Industrial motors are also major energy consumers, including industrial low-voltage drives, servo drives, heat pumps, and air conditioners, accounting for a total of global annual electricity consumption; 45% above. Currently, Europe, North America, and China have established strict energy efficiency standards to reduce motor energy consumption. According to European energy efficiency regulations, since; Starting from July 1, 2023, the prescribed motor ratings will be mandatory to meet IE4 energy efficiency level 2.2; kW The transition of the four pole motor from IE2 to IE3 reduced losses by 15.2%, and from IE3 to IE4 reduced losses by 21%, resulting in an overall efficiency increase of 89.5%. The need to redesign the system from Si based devices to SiC devices will help achieve energy-saving goals, so the growth rate of SiC demand in the industrial motor field will be higher than in other fields in the future.
